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FJAFS1720 ? esbc? rated npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJAFS1720 rev. 1.0.0 1 january 2013 FJAFS1720 esbc ? rated npn power transistor esbc features (fds8817 mosfet) ? low equivalent on resistance ? very fast switch: 150 khz ? squared rbsoa: up to 1700 v ? avalanche rated ? low driving capacitance, no miller capacitance ? low switching losses ? reliable hv switch: no false triggering due to high dv/dt transients applications ? high-voltage and high-speed power switches ? emitter-switched bipolar/mosfet cascode (esbc ? ) ? smart meters, smart breakers, smps, hv industrial power supplies ? motor drivers and ignition drivers ordering information notes: 1. figure of merit. 2. other fairchild mosfets can be used in this esbc application. v cs(on) i c equiv. r cs(on) 0.304 v 10 a 0.0304
part number marking package packing method FJAFS1720tu j1720 to-3pf tube 1.base 2.collector 3.emitter to-3pf 1 1 2 3 b c e figure 2. internal schematic diagram c b g s fds8817 FJAFS1720 figure 3. esbc configuration (2) figure 1. pin configuration description the FJAFS1720 is a low-cost, high-performance power switch designed to provide the best performance when used in an esbc ? configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. the power switch is designed to operate up to 1700 volts and up to 12 amps, while providing exception- ally low on-resistance and very low switching losses. the esbc ? switch is designed to be driven using off-the- shelf power supply controllers or drivers. the esbc ? mosfet is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching, the esbc ? configuration further minimizes the required driving power because it does not have miller capacitance. the FJAFS1720 provides exceptional reliability and a large operating range due to its square reverse-bias-safe- operating-area (rbsoa) and rugged design. the device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. the power switch is manufa ctured using a dedicated high-voltage bipolar process and is packaged in a high- voltage to-3pf package.
FJAFS1720 ? esbc? rated npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJAFS1720 rev. 1.0.0 2 absolute maximum ratings (3) values are at t a = 25c unless otherwise noted. note: 3. pulse test is pulse width 5 ms, duty cycle 10%. thermal characteristics values are at t a = 25c unless otherwise noted. electrical characteristics (4) values are at t a = 25c unless otherwise noted. note: 4. pulse test: pulse width ? 5 ms, duty cycle ? 10%. symbol parameter value units v cbo collector-base voltage 1700 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 6 v i c collector current (dc) 12 a p c collector dissipation (t c = 25c) 60 w t j operating and junction temperature range -55 to +125 c t stg storage temperature range -55 to +150 c symbol parameter max. units r jc thermal resistance, junction to case 2.08 c/w symbol parameter test conditions min. typ. max. units i ces collector cut-off current v cb = 1400 v, r be = 0 100 a i cbo collector cut-off current v cb = 800 v, i e = 0 10 a i ebo emitter cut-off current v eb = 4 v, i c = 0 100 a bv cbo collector-base breakdown voltage i c = 500 a, i e = 0 1700 v bv ceo collector-emitter breakdown voltage i c = 5 ma, i b = 0 800 v bv ebo base-emitter breakdown voltage i e = 500 a, i c = 0 6 v h fe1 h fe2 dc current gain v ce = 5 v, i c = 1 a 8.0 v ce = 5 v, i c = 11 a 5.5 8.5 v ce (sat) collector-emitter saturation voltage i c = 10 a, i b = 3.33 a, h fe = 3 0.25 v i c = 5 a, i b = 1.0 a, h fe = 5 0.20 v i c = 1 a, i b = 0.1 a, h fe = 10 0.20 v v be (sat) base-emitter saturation voltage i c = 10 a, i b = 3.33 a, h fe = 3 0.86 v
FJAFS1720 ? esbc? rated npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJAFS1720 rev. 1.0.0 3 esbc configured electr ical characteristics (5) values are at t a = 25c unless otherwise noted. note: 5. used typical fds8817 mosfet specifications in table. table could vary if other fairchild mosfets are used. symbol parameter test conditions min. typ. max. units f t current gain bandwidth product i c = 0.1 a,v ce = 10 v 15 mhz it f inductive current fall time v gs = 10 v, r g = 47 , v clamp = 500 v, i c = 2 a, i b = 0.2 a, h fe = 10 l c = 1 mh, srf = 350 khz 60 ns t s inductive storage time 1000 ns vt f inductive voltage fall time 85 ns vt r inductive voltage rise time 125 ns t c inductive crossover time 165 ns it f inductive current fall time v gs = 10 v, r g = 47 , v clamp = 500 v, i c = 5 a, i b = 1 a, h fe = 5 l c = 1 mh, srf = 350 khz 24 ns t s inductive storage time 1500 ns vt f inductive voltage fall time 85 ns vt r inductive voltage rise time 65 ns t c inductive crossover time 110 ns v csw maximum collector source voltage at turn-off without snubber h fe = 5, i c = 6 a 1700 v i gs(os) gate-source leakage cur- rent v gs = 20 v 1.0 na v cs(on) collector-source on voltage v gs = 10 v, i c = 10 a, i b = 3.3 a, h fe = 3 0.3040 v v gs = 10 v, i c = 6 a, i b = 2 a, h fe = 3 0.2124 v v gs = 10 v, i c = 3 a, i b = 1 a, h fe = 3 0.1362 v v gs = 10 v, i c = 3 a, i b = 0.6 a, h fe = 5 0.1662 v v gs(th) gate threshold voltage v bs = v gs, i b = 250 a 1.9 v c iss input capacitance (v gs = v cb = 0) v cs = 25 v, f = 1 mhz 1805 pf q gs(tot) gate-source charge v cb =0 v gs = 10 v, i c = 6 a, v cs = 25 v 6nc r ds(on) static drain-source on resistance v gs = 10 v, i d = 15 a 5.4 m v gs = 10 v, i d = 15 a, t a = 125 c 7.5 m v gs = 4.5 v, i d = 12.6 a 7.0 m
FJAFS1720 ? esbc? rated npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJAFS1720 rev. 1.0.0 4 typical performan ce characteristics figure 4. static characteristics figure 5. dc current gain figure 6. collector-emi tter saturation voltage h fe =3 figure 7. collector-emi tter saturation voltage h fe =5 figure 8. collector-emi tter saturation voltage h fe =10 figure 9. collector-emi tter saturation voltage h fe =20 0246810 0 2 4 6 8 10 12 14 16 i b =4.0a i b =2.0a i b =1.5a i b =1.0a i b =0.5a i b =0.2a i c [a], collector current 0.1 1 10 100 1 10 100 v ce = 5v t a = 125 o c t a = 25 o c t a = - 25 o c h fe , dc current gain 0.1 1 10 0.01 0.1 1 t a = 25 o c t a = 125 o c i c = 3 i b t a = - 25 o c v ce (sat) [v], saturation voltage i c [a], collector current 0.1 1 10 0.01 0.1 1 10 t a = 125 o c t a = -25 o c t a = 25 o c i c = 5 i b v ce (sat) [v], saturation voltage i c [a], collector current 0.1 1 10 0.1 1 10 100 t a = 125 o c t a = -25 o c t a = 25 o c i c = 10 i b v ce (sat) [v], saturation voltage i c [a], collector current 0.1 1 10 0.1 1 10 100 t a = 125 o c t a = -25 o c t a = 25 o c i c = 20 i b v ce (sat) [v], saturation voltage i c [a], collector current
FJAFS1720 ? esbc? rated npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJAFS1720 rev. 1.0.0 5 typical performan ce characteristics (continued) figure 10. base-emitter on voltage figure 11. capacitance figure 12. inductive load collector curren t fall-time (t f ) figure 13. inductive load collector current storage time (t stg ) figure 14. inductive load collector voltage fall-time (t f ) figure 15. inductive load collector voltage rise-time (t r ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 12 14 16 v ce = 5v - 25 o c 25 o c 125 o c i c [a], collector current v be [v], base-emitter voltage 1 10 100 1000 10000 10 100 1000 c ob (emitter at socket) c ob (emitter open) c ob (emitter grounded) capacitance [pf] collector-base voltage[v] 123456789101112 0 16 32 48 64 80 96 112 128 144 160 hfe=10 esbc hfe=5 esbc hfe=10 common emitter hfe=5 common emitter time [ns] i c [a], collector current t a = 25 o c l=1mh srf=350khz 123456789101112 0.5 1.0 1.5 2.0 2.5 3.0 hfe=10 esbc hfe=5 esbc hfe=10 common emitter hfe=5 common emitter time [us] i c [a], collector current t a = 25 o c l=1mh srf=350khz 123456789101112 40 80 120 160 200 240 280 320 360 400 440 hfe=10 esbc hfe=5 esbc bule line : hfe=10 common emitter hfe=5 common emitter time [ns] i c [a], collector current t a = 25 o c l=1mh srf=350khz 123456789101112 0 40 80 120 160 200 240 280 320 360 hfe=10 esbc hfe=5 esbc hfe=10 common emitter hfe=5 common emitter time [ns] i c [a], collector current t a = 25 o c l=1mh srf=350khz
FJAFS1720 ? esbc? rated npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJAFS1720 rev. 1.0.0 6 typical performan ce characteristics (continued) figure 16. inductive load collector current / voltage crossover (t c ) figure 17. reverse bias safe operating area figure 18. esbc rbsoa figure 19. forward bias safe operating area figure 20. power derating 123456789101112 40 80 120 160 200 240 280 320 360 400 hfe=10 esbc hfe=5 esbc hfe=10 common emitter hfe=5 common emitter time [ns] i c [a], collector current t a = 25 o c l=1mh srf=350khz 10 100 1000 10000 5 10 15 20 25 30 35 40 r b2 = 0, i b1 = 15a v cc = 30v, l = 200 h v be (off) = -3v v be (off) = -6v 1 i c [a], collector current v ce [v], collector-emitter voltage 0 200 400 600 800 1000 1200 1400 1600 1800 0 2 4 6 8 10 12 v dd = +/-50v, r load = 500kohms h fe = 4 i c [a], collector current v ce [v], collector-emitter voltage 1 10 100 1000 10000 0.01 0.1 1 10 100 t c = 25 o c single pulse t = 100ms t = 10ms t = 1ms i c (pulse) i c (dc) i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 20 40 60 80 p c [w], power dissipation t c [ o c], case temperature
FJAFS1720 ? esbc? rated npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJAFS1720 rev. 1.0.0 7 test circuits a }?? st???? p j r\g} k|{ a }?? st???? p j k|{ }?? a p i figure 21. test circuit for inductive load and reverse bias safe operating figure 22. energy rating test circuit figure 23. f t measurement figure 24. fbsoa
FJAFS1720 ? esbc? rated npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJAFS1720 rev. 1.0.0 8 test circuits (continued) functional test waveforms figure 25. simplified satura ted switch driver circuit figure 26. crossover time measurement figure 27. saturated switching waveform 90% vce 10% vce 90% ic 10% ic t off
FJAFS1720 ? esbc? rated npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJAFS1720 rev. 1.0.0 9 functional test waveforms (continued) f i g u r e 2 8 . st o r a g e ti m e - c o m m o n e m i t t e r base turn off (ib2) to i c fall-time f i g u r e 2 9 . s t o r a g e t i m e - e s b c f e t gate (off) to i c fall-time
FJAFS1720 ? esbc? rated npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJAFS1720 rev. 1.0.0 10 very wide input voltage range supply - 80 w; secondary-side regulation: 3 capacitor input; quasi resonant driving esbc switches xy [ z \ ] _ o} }?? v|{ jz mi kl{ z y x x y oxxhnx}t tiyywx\wj{{| xwww?m z\} xwww?m z\} x y z[ \ ^ ` yy}? yl ttzkzw^w xu[x[_~z xw?m xww?m y\} xy}? mqhmzx\xwh{| mkj]\\ tw?x]w_i[^xh w]rl[[wh |m[ww^ xu[x[_ xyw?m [\w} xyw?m [\w} xyw?m [\w} y^wr y^wr y^wr y^wr y^wr y^wr x????gy???????gxywro? zw~???? ywwtxwww}gkj xuwhg????? xytx[}???? [}???? y[}gxuy\h q qgt???g?????g??g???????? 1 FJAFS1720 fds8817 2.5a limit 24v@3.3a 80 w 100k 100k 100k 100k 100k 100k 100k 680 f 680 f 680 f fairchild proprietary figure30. v cc derived figure31. v bias supply derived figure32. proportional drive
FJAFS1720 ? esbc? rated npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJAFS1720 rev. 1.0.0 11 physical dimensions figure 33. to3pf, mold ed, 3ld, fullpack (ag) package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semi conductor representative to ver ify or obtain the most recent revision. package specifications do not ex pand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconduct or?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/dwg/to/to3pfa03.pdf . 5.70 5.30 2.20 1.80 3.50 3.10 15.70 15.30 3.80 3.40 4.60 4.40 26.70 26.30 16.70 16.30 14.70 14.30 2.70 2.30 15.00 14.60 4.20 3.80 5.75 5.15 5.75 5.15 2.20 1.80 (3x) 0.95 0.65 (3x) 9.90 7.75 1.93 1 2 3 1.10 0.80 2.20 1.80 3.50 3.10 10.20 9.80 16.70 16.30 3.20 2.80 23.20 22.80 notes: a. this package conforms to sc94 jeita packaging standard. b. all dimensions are in millimeters. c. dimensions are exclusive of burrs, mold flash and tie bar protrusions. d. pin 2 connects to dap. e. drawing file name: to3pfa03rev1 to3pf
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